Xu Zheng Advanced Precision【High-Performance Sintered Polycrystalline Silicon Carbide (SiC)】The Perfect Combination of Ultimate Thermal Conductivity and Thermal Stability! High Thermal Conductivity Sintered Polycrystalline Silicon Carbide SiC Thermal Diffusion Test Report

Infrared Thermal Camera / Blackbody Radiation Source (Laboratory Hot Plate / Blackbody Source) black square flat heating source. In scientific experiments, for ultra-high precision calibration during general thermal diffusion tests, this is typically a precision electric heating plate coated with high emissivity. Using an infrared camera produced by Fluke, infrared energy emitted by objects can be converted into visual images, displaying real-time surface temperature values at various points to observe the speed and status of thermal radiation diffusion within the material.
We optimized the sintering curve through AI technology, enabling silicon carbide to demonstrate astonishing thermal conductivity performance. It not only withstands high temperatures and has low thermal expansion, but also ensures the physical structure remains stable without warping or deformation under high thermal loads.
Field test results prove: Thermal diffusion is fast and uniformly distributed (as shown in the figure). Applying it as an interface layer between the "heat source and heat dissipation materials" significantly improves the overall system's thermal management efficiency.
Thermal Diffusion Image of Standard Commercial Materials
Xu Zheng SiC Uniform High-Speed Conduction Image
Xu Zheng SiC Heat Dissipation Module
Xu Zheng Si3N4 / SiC has been finely polished to a mirror finish. Scanning analysis using WLI reveals that the surface is continuous and smooth, with no pores or micro-cracks detected.
Because WLI offers a vertical resolution down to 1 nm and a lateral resolution down to 300 nm, any internal pores connected to the surface would manifest as height variations in the interferogram.
Xu Zheng SiC Heat Dissipation Module Test Image
Technical Specifications for High Thermal Conductivity Silicon Carbide (SiC) Material
| Spec | Unit | Test Standard / Value |
|---|---|---|
| Purity | % | ≧ 98.5 |
| Density | g/cm3 | 3.16 |
| Mohs Hardness | CNS3299:2006 | 9 |
| Flexural Strength | MPa (ASTM D790-17) | 337 |
| Thermal Conductivity | W/(m·K) | ≧ 170 |
| Electrical Resistivity (Ω) | 500 V/sec ( JIS K6911:1995 ) | ≧ 4.34 x 107 |
| Coefficient of Thermal Expansion | 23~200 °C (ASTM E831-19) | 3.266 x 10-6 |
| Coefficient of Thermal Expansion | 23~500 °C (ASTM E831-19) | 3.913 x 10-6 |